Thin stack packages

ABSTRACT

The stack package includes a substrate body layer having a top surface and a bottom surface, first circuit patterns disposed on the bottom surface of the substrate body layer, second circuit patterns disposed on the top surface of the substrate body layer, a first semiconductor chip including first bumps, and a second semiconductor chip including second bumps. The first bumps extend through the substrate body layer to be electrically coupled to the first circuit patterns, and the second bumps extend past sidewalls of the first semiconductor chip to be electrically coupled to the second circuit patterns. The second semiconductor chip is stacked on the first semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. 119(a) to KoreanApplication No. 10-2014-0036526, filed on Mar. 28, 2014, in the Koreanintellectual property Office, which is incorporated herein by referencein its entirety as set forth in full.

BACKGROUND

1. Technical Field

Embodiments relate to package technologies, and more particularly, tothin stack packages.

2. Related Art

Semiconductor devices employed in many electronic systems may includevarious electronic circuit elements. The electronic circuit elements maybe integrated in and/or on a semiconductor substrate in thesemiconductor device. Semiconductor devices may also be referred to assemiconductor chips or semiconductor dies. Memory semiconductor chipsmay be employed in various electronic systems. Prior to the use of thesemiconductor devices, such as for example memory semiconductor chips,in the electronic systems, the semiconductor devices may be encapsulatedto create semiconductor packages. The semiconductor packages may be usedin electronic systems that may, for example, include computers, mobilesystems or data storage media.

As the mobile systems, such as for example, smart phones becomeincreasingly lighter and smaller, the semiconductor packages employed inthe mobile systems have been scaled down in size. In addition,relatively large capacity semiconductor packages are increasing indemand with the development of multi-functional mobile systems. In manycases, efforts have been directed towards the placement of a pluralityof semiconductor chips in a single package in an attempt to providerelatively large capacity semiconductor packages. An examples of such asemiconductor package is a stack package.

SUMMARY

An embodiment of a thin stack package includes a substrate includingfirst circuit patterns and second circuit patterns located at adifferent level from the first circuit patterns, a first semiconductorchip including first bumps electrically coupled to the first circuitpatterns, and a second semiconductor chip including second bumpselectrically coupled to the second circuit patterns. The secondsemiconductor chip is stacked on a surface of the first semiconductorchip opposite to the substrate and the second bumps extend pastsidewalls of the first semiconductor chip.

In an embodiment, a thin stack package includes a substrate body layerhaving a top surface and a bottom surface, first circuit patternsdisposed on the bottom surface of the substrate body layer, secondcircuit patterns disposed on the top surface of the substrate bodylayer, a first semiconductor chip including first bumps, and a secondsemiconductor chip including second bumps. The first bumps extendthrough the substrate body layer to be electrically coupled to the firstcircuit patterns, and the second bumps extend past sidewalls of thefirst semiconductor chip to be electrically coupled to the secondcircuit patterns. The second semiconductor chip is stacked on the firstsemiconductor chip, wherein a centerline along a length of the secondsemiconductor chip is generally perpendicular to a center line along alength of the first semiconductor chip.

In an embodiment, a thin stack package includes a first semiconductorchip including first bumps and a second semiconductor chip stacked onthe first semiconductor chip. The second semiconductor chip includessecond bumps. A substrate includes first circuit patterns and secondcircuit patterns, wherein the second circuit patterns are disposed at adifferent level from the first circuit patterns. The first circuitpatterns are electrically coupled to the first bumps, and the secondcircuit patterns are electrically coupled to the second bumps. The firstcircuit patterns are covered with a first dielectric layer, and thesecond circuit patterns are covered with a second dielectric layer. Thefirst and second semiconductor chips are covered with a protectionlayer.

In an embodiment, a memory card includes a memory and a memorycontroller configured to control an operation of the memory. At leastone of the memory and the memory controller includes a substrateincluding first circuit patterns and second circuit patterns disposed ata different level from the first circuit patterns, a first semiconductorchip including first bumps electrically coupled to the first circuitpatterns, and a second semiconductor chip including second bumpselectrically coupled to the second circuit patterns. The secondsemiconductor chip is stacked on a surface of the first semiconductorchip opposite to the substrate and the second bumps extend pastsidewalls of the first semiconductor chip.

In an embodiment, a memory card includes a memory and a memorycontroller configured to control an operation of the memory. At leastone of the memory and the memory controller includes a substrate bodylayer having a top surface and a bottom surface, first circuit patternsdisposed on the bottom surface of the substrate body layer, secondcircuit patterns disposed on the top surface of the substrate bodylayer, a first semiconductor chip including first bumps, and a secondsemiconductor chip including second bumps. The first bumps extendthrough the substrate body layer to be electrically coupled to the firstcircuit patterns, and the second bumps extend past sidewalls of thefirst semiconductor chip to be electrically coupled to the secondcircuit patterns. The second semiconductor chip is stacked on the firstsemiconductor chip and a centerline along a length of the secondsemiconductor chips is generally perpendicular to a centerline along alength of the first semiconductor chip.

In an embodiment, a memory card includes a memory and a memorycontroller that controls an operation of the memory. At least one of thememory and the memory controller includes a first semiconductor chipincluding first bumps and a second semiconductor chip stacked on thefirst semiconductor chip. The second semiconductor chip includes secondbumps. A substrate includes first circuit patterns and second circuitpatterns located at a different level from the first circuit patterns.The first circuit patterns are electrically coupled to the first bumps,and the second circuit patterns are electrically coupled to the secondbumps. The first circuit patterns are covered with a first dielectriclayer, and the second circuit patterns are covered with a seconddielectric layer. The first and second semiconductor chips are coveredwith a protection layer.

In an embodiment, an electronic system includes a memory and acontroller coupled to the memory via a bus. At least one of the memoryand the controller includes a substrate including first circuit patternsand second circuit patterns located at a different level from the firstcircuit patterns, a first semiconductor chip including first bumpselectrically coupled to the first circuit patterns, and a secondsemiconductor chip including second bumps electrically coupled to thesecond circuit patterns. The second semiconductor chip is stacked on asurface of the first semiconductor chip opposite to the substrate suchthat the second bumps extend past sidewalls of the first semiconductorchip.

In an embodiment, an electronic system includes a memory and acontroller coupled to the memory via a bus. At least one of the memoryand the controller includes a substrate body layer having a top surfaceand a bottom surface, first circuit patterns disposed on the bottomsurface of the substrate body layer, second circuit patterns disposed onthe top surface of the substrate body layer, a first semiconductor chipincluding first bumps, and a second semiconductor chip including secondbumps. The first bumps extending through the substrate body layer to beelectrically coupled to the first circuit patterns, and the second bumpsextending past sidewalls of the first semiconductor chip to beelectrically coupled to the second circuit patterns. The secondsemiconductor chip is stacked on the first semiconductor chip, wherein acenterline along a length of the second semiconductor chip is generallyperpendicular to a centerline along a length of the first semiconductorchip.

In an embodiment, an electronic system includes a memory and acontroller electrically coupled to the memory via a bus. At least one ofthe memory and the controller includes a first semiconductor chipincluding first bumps and a second semiconductor chip stacked on thefirst semiconductor chip. The second semiconductor chip includes secondbumps. A substrate includes first circuit patterns and second circuitpatterns located at a different level from the first circuit patterns.The first circuit patterns are electrically coupled to the first bumps,and the second circuit patterns are electrically coupled to the secondbumps. The first circuit patterns are covered with a first dielectriclayer, and the second circuit patterns are covered with a seconddielectric layer. The first and second semiconductor chips are coveredwith a protection layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an embodiment of a stack package;

FIGS. 2 and 3 are cross-sectional views of the stack package taken alonga line X-X′ of FIG. 1;

FIG. 4 is a cross-sectional view a package substrate employed in anembodiment of a stack package;

FIGS. 5 and 6 are perspective views of semiconductor chips employed inan embodiment of a stack package;

FIG. 7 is a perspective view of a stack structure of semiconductor chipsemployed in an embodiment of a stack package;

FIGS. 8 and 9 are perspective views of semiconductor chips with adhesivelayers employed in an embodiment of a stack package;

FIG. 10 is a plan view of a package substrate with openings employed inan embodiment of a stack package;

FIG. 11 is a plan view of a package substrate with openings employed inan embodiment of a stack package;

FIG. 12 is a cross-sectional view taken along a line X2-X2′ of FIG. 11;

FIG. 13 is a cross-sectional view taken along a line X2-X2′ of FIG. 11;

FIG. 14 is a cross-sectional view taken along a line X-X′ of FIG. 1;

FIG. 15 is a block diagram representation of an electronic systemincluding an embodiment of a stack package; and

FIG. 16 is a block diagram representation of an electronic systemincluding an embodiment of a stack package.

DETAILED DESCRIPTION OF THE EMBODIMENTS

It will be understood that although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element. Thus, a first element in someembodiments could be termed a second element in other embodiments.

It will also be understood that when an element is referred to as being“on,” “above,” “below,” or “under” another element, it can be directly“on,” “above,” “below,” or “under” the other element, respectively, orintervening elements may also be present. Accordingly, the terms such as“on,” “above,” “below,” or “under” which are used herein are for thepurpose of describing various embodiments.

It will be further understood that when an element is referred to asbeing “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements or layers should be interpreted in a likefashion. Semiconductor chips may be obtained by separating asemiconductor substrate or a wafer where electronic circuits areintegrated into a plurality of pieces using a die sawing process.

The semiconductor chips may correspond to memory chips or logic chips.The memory chips may include dynamic random access memory (DRAM)circuits, static random access memory (SRAM) circuits, flash circuits,magnetic random access memory (MRAM) circuits, resistive random accessmemory (ReRAM) circuits, ferroelectric random access memory (FeRAM)circuits or phase change random access memory (PcRAM) circuits that areintegrated on and/or in the semiconductor substrate. The logic chip mayinclude logic circuits that are integrated on and/or in thesemiconductor substrate. In some cases, the term “semiconductorsubstrate” used herein may be construed as a semiconductor chip or asemiconductor die in which integrated circuits are formed.

Referring to FIG. 1, an embodiment of a stack package 10 may include apackage substrate 100 and first and second semiconductor chips 200, 300vertically stacked on the package substrate 100. The first and secondsemiconductor chips 200, 300 may be flip chips. The first and secondsemiconductor chips 200, 300 may be stacked in a substantially verticaldirection in a double die package structure. A plurality of first bumps210 may be disposed along the edges of a bottom surface of the firstsemiconductor chip 200 and operate to electrically couple the firstsemiconductor chip 200 to the package substrate 100. Similarly, aplurality of second bumps 310 may be disposed along the edges of abottom surface of the second semiconductor chip 300 and operate toelectrically couple the second semiconductor chip 300 to the packagesubstrate 100. A third semiconductor chip (not shown) may be stacked ona surface of the second semiconductor chip 300 that is opposite to thesurface facing the first semiconductor chip 200.

The second semiconductor chip 300 and the first semiconductor chip 200may be arranged as illustrated in a plan view of FIG. 1. The first andsecond semiconductor chips 200, 300 may each have substantially arectangular shape. A center line running along a length of the firstsemiconductor chip 200 may be disposed substantially perpendicular to acenter line running along a length of the second semiconductor chip 300as illustrated in FIG. 1. The first bumps 210 may be disposed along theopposing edges of a bottom surface of the first semiconductor chip 200,and the second bumps 310 may be disposed along opposing edges of abottom surface of the second semiconductor chip 300. The edges of thefirst and second semiconductor chips 200, 300 along which the first andsecond bumps 210, 310 are disposed may correspond to non-overlappingregions between the first and second semiconductor chips 200 300. Thefirst bumps 210 disposed along each of the edges of the firstsemiconductor chip 200 may be arranged in a first direction, and thesecond bumps 310 disposed along each of the edges of the secondsemiconductor chip 300 may be arranged in a second direction where thesecond direction is substantially perpendicular to the first direction.In some embodiments, the first bumps 210 may be disposed along one ofthe two opposing edges of the first semiconductor chip 200. Similarly,in some embodiments, the second bumps 310 may be disposed along one ofthe two opposing edges of the second semiconductor chip 300.

Although FIG. 1 illustrates an example where the center lines of thelengths of the first and second semiconductor chips 200, 300 aredisposed at substantially right angles with respect to each other, thefirst and second semiconductors 200, 300 may be arranged in alternativeconfigurations. For example, in an embodiment, the first and secondsemiconductor chips 200, 300 are stacked in a step structureconfiguration. That is, the second semiconductor chip 300 may belaterally offset relative to the first second semiconductor chip 200such that an edge of the second semiconductor chip 300 laterallyprotrudes from a sidewall of the first semiconductor chip 200. Morespecifically, the second semiconductor chip 300 shown in FIG. 1 isrotated in a clockwise direction or a counterclockwise direction bysubstantially 90 degrees to completely overlap with the firstsemiconductor chip 300. The rotated second semiconductor chip 300 islaterally shifted in a direction to expose an edge of the firstsemiconductor chip 200. The arrangement of the rotated and shiftedsecond semiconductor chip 300 and the first semiconductor chip 200 maybe a step structure configuration.

Referring to FIGS. 1 and 2, the first and second semiconductor chips200, 300 may be substantially vertically stacked on the packagesubstrate 100, as described above. The package substrate 100 may includefirst circuit patterns 150 and second circuit patterns 130. The firstbumps 210 of the first semiconductor chip 200 may be electricallycoupled to the first circuit patterns 150, and the second bumps 310 ofthe second semiconductor chip 300 may be electrically coupled to thesecond circuit patterns 130.

The package substrate 100 may include a substrate body layer 110composed of a dielectric material. The first and second circuit patterns150, 130 may be disposed on the substrate body layer 110. The first andsecond circuit patterns 150, 130 may be formed using a materialincluding a conductive material such as a metal layer. The metal layermay be, for example, a copper layer. Although not shown in the drawing,the first and second circuit patterns 150, 130 may electrically couplethe first and second semiconductor chips 200, 300 to an external deviceor an external module substrate. The substrate body layer 110 mayinclude a core layer composed of a dielectric material or may be aprepreg layer having a multi-layered interconnection substratestructure. In an embodiment, the package substrate 100 may have adouble-layered interconnection substrate structure that includes a corelayer. The first and second circuit patterns 150, 130 may be disposed ontwo opposing surfaces of the core layer. Alternatively, the packagesubstrate 100 may include a prepreg layer corresponding to the substratebody layer 110. The first and second circuit patterns 150, 130 may bedisposed on two opposing surfaces of the prepreg layer. A third circuitpatterns (not shown) may be disposed in the prepreg layer. The thirdcircuit patterns may be disposed in the prepreg layer in a singlelayered structure or a multi-layered structure.

The first circuit patterns 150 may be disposed at a different level fromthe second circuit patterns 130. That is, the first circuit patterns 150may be disposed at a level that is relatively higher or relatively lowerthan a level of the second circuit patterns 130. The first circuitpatterns 150 may be disposed on a surface of the substrate body layer110, and the second circuit patterns 130 may be disposed on a differentsurface of the substrate body layer 110. Alternatively, the first andsecond circuit patterns 150, 130 may be disposed at different levels inthe substrate body layer 110.

As described above, the first circuit patterns 150 may be disposed at alevel that is relatively higher or relatively lower than a level of thesecond circuit patterns 130. For example, the first circuit patterns 150may be disposed on a surface of the substrate body layer 110, and thesecond circuit patterns 130 may be disposed on a different surface ofthe substrate body layer 110 opposite to the surface associated withfirst circuit patterns 150. There may be a level differencecorresponding to a thickness of the substrate body layer 110 between thefirst and second circuit patterns 150, 130. In such a case, the firstcircuit patterns 150 may be disposed on a bottom surface of thesubstrate body layer 110 opposite to the first semiconductor chip 200,and the second circuit patterns 130 may be disposed on a top surface ofthe substrate body layer 110 opposite to the first circuit patterns 150.

While FIG. 2 illustrates an example where the first circuit patterns 150is disposed on a bottom surface of the substrate body layer 110 and thesecond circuit patterns 130 is disposed on a top surface of thesubstrate body layer 110, alternative arrangements may be used toarrange the first circuit patterns 150 with respect to the secondcircuit patterns 130. For example, although not shown in the drawings,the substrate body layer 110 may include a stepped surface including afirst surface and a second surface where the first and second surfacesare at different levels. The first and second circuit patterns 150, 130may be disposed on the first and second surfaces of the stepped surface,respectively.

Referring back to FIG. 2, first openings 142 may extend through thesubstrate body layer 110. The first openings 142 may be used toelectrically couple the first bumps 210 of the first semiconductor chip200 to the first circuit patterns 150 of the package substrate 100. Thefirst openings 142 may correspond to through holes that extend throughthe substrate body layer 110 to expose the first circuit patterns 150.The first semiconductor chip 200 may be disposed on the packagesubstrate 100 such that each of the first bumps 210 are inserted arespective ones of the first openings 142. The first bumps 210 may beelectrically coupled to the first circuit patterns 150 via firstconductive adhesion layers 211 disposed on the first circuit patterns150 that are exposed by the first openings 142.

In an embodiment, the first dielectric layer 160 may include a solderresist material. Each of the outer connection terminals 600 may be aconnection member, such as for example, a solder ball electricallycoupled to an external device or a module substrate.

The package substrate 100 may include a second dielectric layer 140disposed on the top surface of the substrate body layer 110 and coveringthe second circuit patterns 130. The second circuit patterns 130overlapping with the second bumps 310 may be exposed by second openings143 extending through the second dielectric layer 140. The seconddielectric layer 140 may include the same dielectric material as thesubstrate body layer 110. In an embodiment, the second dielectric layer140 may include a solder resist material. Each of the second bumps 310may be inserted in a respective one of the second openings 143. Thesecond bumps 310 may be electrically coupled to the second circuitpatterns 130 via second conductive adhesion layers 311 disposed on thesecond circuit patterns 130 that are exposed by the second openings 143.Each of the second conductive adhesion layers 311 may include a soldermaterial. In addition, third openings 145 may extend through the seconddielectric layer 140. The third openings 145 may extend through thesecond dielectric layer 140 to expose the first openings 142. That is,the third openings 145 may be substantially vertically aligned with thefirst openings 142. Thus, the first openings 142 and the third openings145 may provide through holes in which the first bumps 210 are inserted.The second semiconductor chip 300 may be stacked on the firstsemiconductor chip 200 such that the second bumps 310 extend past thesidewalls of the first semiconductor chip 200 to be electrically coupledto the second circuit patterns 130.

A conductive via 113 may extend through the substrate body layer 110 toelectrically couple at least one of the first circuit patterns 150 to atleast one of the second circuit patterns 130. Accordingly, the secondbump 310 may be electrically coupled to the outer connection member 600through the conductive via 113. A protection layer 500 may be disposedon the package substrate 100 to cover the first and second semiconductorchips 200, 300. The protection layer 500 may be formed by molding anepoxy molding compound (EMC) material. Alternatively, the protectionlayer 500 may be formed by laminating a dielectric layer or a dielectricfilm on the package substrate 100 to embed the first and secondsemiconductor chips 200, 300 therein. In such a case, the package 10 mayhave an embedded package form.

The first semiconductor chip 200 may be attached to the packagesubstrate 100. The second semiconductor chip 300 may be attached to thefirst semiconductor chip 200 using an adhesive layer 430 disposedbetween the first and second semiconductor chips 200, 300. The adhesivelayer 430 may include an insulation material. The adhesive layer 430 maysuppress or prevent some failures associated with the warping of thefirst and second semiconductor chips 200, 300. An additional adhesivelayer (not shown) substantially similar to the layer 430 may be disposedbetween the first semiconductor chip 200 and the second dielectric layer140.

A thickness of the first and second semiconductor chips 200, 300 may bereduced to create a relatively thin stack package 10. In such a case, ifthe relatively thin stack package 10 is subjected to heat during athermal process, a tensile stress applied to passivation layers of thesemiconductor chips 200, 300 or to the package substrate 100 composed ofa dielectric layer may increase and cause a warping of the semiconductorchips 200, 300. As a result, a contact failure between the bumps 210,310 and the circuit patterns 150 and 130 may occur. In addition, whenthe solder layers of the first and second conductive adhesion layers211, 311 disposed between the bumps 210, 310 and the circuit patterns150, 130 are reflowed, the bumps 210, 310 may be spaced apart from thecircuit patterns 150, 130 in a manner that may cause a non-wet failureof the solder layers. Use of the embodiment of the adhesive layer 430described above may decrease or prevent warping of the first and secondsemiconductor chips 200, 300 and may prevent contact failure between thebumps 210, 310 and the circuit patterns 150, 130. Thus, even with thereduction in the relative thicknesses of the first and secondsemiconductor chips 200, 300, the use of the adhesive layer 430 mayreduce or prevent warping of the first and second semiconductor chips200, 300 in a thin stack package.

Referring to FIG. 4, the package substrate 100 may include the firstcircuit patterns 150 disposed on a bottom surface of the substrate bodylayer 110 and the second circuit patterns 130 disposed on a top surfaceof the substrate body layer 110. Thus, the first circuit patterns 150may be located at a different level with respect to the second circuitpatterns 130. As illustrated in FIG. 2, the first openings 142 mayextend through the substrate body layer 110 to expose the first circuitpatterns 150. The first openings 142 may extend into the seconddielectric layer 140 stacked on the substrate body layer 110 to providethrough holes. The first bumps 210 that electrically couple the firstsemiconductor chip 200 to the first circuit patterns 150 are insertedinto the through holes. In such a case, a depth D of the first openings142 may be determined by the length of the first bumps (210 of FIG. 2).The first openings 142 may have a depth that is substantially equal tothe length of the first bumps 210. Actually, the first openings 142 mayhave a depth that is substantially equal to sum of the length of thefirst bumps 210 and thickness of the adhesion layer 211. The secondopenings 143 extending through the second dielectric layer 140 mayexpose portions of the second circuit patterns 130 and may providethrough holes. The second bumps 130 are inserted into through holes.

Inlets of the first and second openings 142, 143 may be located atsubstantially the same level as a top surface of the second dielectriclayer 140. Thus, a depth of the second openings 143 may be relativelyless than the depth D of the first openings 142. A difference betweenthe depth D of the first openings 142 and the depth of the secondopenings 143 may be substantially equal to a sum of a thickness of thesubstrate body layer 110 and a thickness of the second circuit patterns130.

Referring to FIG. 5, the first semiconductor chip 200 may include thefirst bumps 210 disposed on a first surface 201 thereof. The first bumps210 may be extend vertically from the first surface 201. The first bumps210 may be disposed on two opposing edges of the first surface 201 ofthe first semiconductor chip 200 and may have a generally cylindricalshape. The first bumps 210 may be include any one of various conductivematerials. For example, the first bumps 210 may be formed from aconductive material selected from the group consisting of a coppermaterial, a gold material, a tin material and any combination thereof.Referring to FIGS. 2 and 5, the first semiconductor chip 200 may bedisposed on the package substrate 100 such that the first surface 201 ofthe first semiconductor chip 200 faces the package substrate 100. Thesecond semiconductor chip 300 may be stacked on a second surface 203 ofthe first semiconductor chip 200 opposite to the package substrate 100.The first surface 201 of the first semiconductor chip 200 may be a frontsurface that is adjacent to the active layers where circuit elementssuch as transistors are integrated.

Referring to FIG. 6, the second semiconductor chip 300 may include thesecond bumps 310 disposed on a third surface 301 thereof. The secondbumps 310 may vertically extend from the third surface 301. The secondbumps 310 may be disposed on opposing edges of the third surface 301 ofthe second semiconductor chip 300 and have a generally cylindricalshape. The second bumps 310 may include any one of various conductivematerials. For example, the second bumps 310 may be formed fromconductive materials selected from the group consisting of a coppermaterial, a gold material, a tin material and any combination thereof.As illustrated in FIG. 2, the second semiconductor chip 300 may bestacked on the first semiconductor chip 200 such that the second bumps310 extend past the sidewalls of the first semiconductor chip 200 andare electrically coupled to the second circuit patterns 130.

The second bumps 310 may have a length L2 that enables electricalcontact with the second circuit patterns 130. Thus, the length L2 of thesecond bumps 310 may be relatively greater than a thickness (T1 of FIG.5) of the first semiconductor chip 200. A thickness T2 of the secondsemiconductor chip 300 may be substantially equal to the thickness T1 ofthe first semiconductor chip 200. The second semiconductor chip 300 mayhave substantially the same configuration as the first semiconductorchip 200. The second bumps 310 may have substantially the sameconfiguration or substantially the same length as the first bumps 210.As illustrated in FIGS. 2 and 3, the second semiconductor chip 300 maybe stacked over the package substrate 100 such that the third surface301 of the second semiconductor chip 300 faces the package substrate 100and all of a fourth surface 303 of the second semiconductor chip 300opposing the third surface 301 is in contact with the protection layer500.

Referring to FIGS. 2 and 7, the second semiconductor chip 300 may bestacked on the first semiconductor chip 200 such that a portion of thesecond semiconductor chip 300 overlaps with a portion of the firstsemiconductor chip 200. In such a case, the second semiconductor chip300 may be stacked on the first semiconductor chip 200 such that all ofthe first and second bumps 210, 310 face the package substrate 100. Thesecond semiconductor chip 300 may cross the first semiconductor chip 200at substantially a right angle, as illustrated in FIG. 1. In such acase, each of the first and second semiconductor chips 200, 300 may havea generally rectangular shape. That is, each of the first and secondsemiconductor chips 200, 300 may have a width and a length where thelength is relatively greater than the width.

Referring to FIGS. 2 and 8, the first adhesive layer 420 may be disposedbetween the package substrate 100 and the first semiconductor chip 200and may reduce or prevent warping of the first semiconductor chip 200.The first adhesive layer 420 may include an insulation material and maybe attached to the first surface 201. The first adhesive layer 420 maybe disposed on the first surface 201 between the two opposing edges ofthe first semiconductor chip 200 where the first bumps 210 are arranged.

Referring to FIGS. 2 and 9, the second adhesive layer 430 may bedisposed between the first semiconductor chip 200 and the secondsemiconductor chip 300 and may reduce or prevent warping of the firstand second semiconductor chips 200, 300. The adhesive layer 430 mayinclude an insulation material and may be attached to the third surface301. The adhesive layer 430 may be disposed on the third surface 301between the two opposing edges of the second semiconductor chip 300where the second bumps 310 are arranged.

Referring to FIGS. 2, 4 and 10, each of the second openings 143extending through the second dielectric layer 140 may have a generallyslit shape and may expose the second circuit patterns 130 arranged on anedge of the substrate body layer 110 and are spaced apart from eachother. The first and third openings 142, 145 extending through thesubstrate body layer 110 and the second dielectric layer 140 may havethrough holes that operate to expose respective ones of the firstcircuit patterns 150. The first bumps 210 may extend into the first andthird openings 142, 145. The first openings 142 (or the third openings145 aligned with the first openings 142) may be disposed to overlap withrespective ones of the first circuit patterns 150. In an embodiment, thesecond openings 143 may be formed to have separate through hole shapesthat are substantially similar to the shapes of the first and thirdopenings 142, 145. Each of the second openings 143 is formed to have aslit shape and may expose at least two or more second circuit patterns130 that are arranged on an edge of the substrate body layer 110 to actas bonding pads. A greater alignment margin may be created when thesecond bumps 310 are inserted in the second openings 143.

As described above, an embodiment of the stack package 10 may berealized by vertically stacking two or more semiconductor chips 200, 300and by electrically coupling the semiconductor chips 200, 300 to thepackage substrate 100 through the bumps 210, 310 used in a flip chiptechnique. The semiconductor chips 200, 300 may be electrically coupledto and physically combined with the package substrate 100 through thebumps 210, 310 without use of bonding wires. Accordingly, a thickness ofthe protection layer 500 covering the semiconductor chips 200, 300 maybe reduced to realize a relatively thinner stack package. The adhesivelayer 430 may be disposed between the package substrate 100 and thesemiconductor chips 200, 300 and may reduce or prevent warping of thesemiconductor chips 200, 300. The thicknesses of the semiconductor chips200, 300 may be reduced to realize a relatively thinner stack package.

Referring to FIGS. 11, 12 and 13, a stack package 15 may include apackage substrate 1100 and first and second semiconductor chips 1200,1300 that are vertically stacked on the package substrate 1100 in a flipchip form. A plurality of first bumps 1210 may be disposed on a bottomsurface (corresponding to a front surface) of two opposing edges of thefirst semiconductor chip 1200 to electrically couple the firstsemiconductor chip 1200 to the package substrate 1100. A plurality ofsecond bumps 1310 may be disposed on a bottom surface (corresponding toa front surface) of two opposing edges of the second semiconductor chip1300 to electrically couple the second semiconductor chip 1300 to thepackage substrate 1100. Another semiconductor chip (not shown) may bestacked on a surface of the second semiconductor chip 1300 opposite tothe first semiconductor chip 1200.

The package substrate 1100 may include second openings 1143 that extendthrough a second dielectric layer 1140 to expose second circuit patterns1130 that are electrically coupled to the second bumps 1310. Each of thesecond openings 1143 may have a generally slit shape and expose thesecond circuit patterns 1130 that are arranged on an edge of a substratebody layer 1110 and are spaced apart from each other. First openings1142 and third openings 1145 aligned with the first openings 1142 mayextend through the substrate body layer 1110 and the second dielectriclayer 1140 and may expose first circuit patterns 1150 disposed on abottom surface of the substrate body layer 1110. Each of the firstopenings 1142 and the corresponding second opening 1145 may have agenerally slit shape and may expose the first circuit patterns 1150 thatare arranged on the bottom surface of an edge of the substrate bodylayer 1110 and are spaced apart from each other. Because the first andthird openings 1142, 1145 have a generally slit shape, each firstopening 1142 and the corresponding third opening 1145 may expose atleast two or more first circuit patterns 1150 that are arranged on anedge of the substrate body layer 1110 to act as bonding pads. In such acase, there may be an increase in an alignment margin when the firstbumps 1210 are inserted in the first and third openings 1142, 1145.

Referring again to FIGS. 12 and 13, the first bumps 1210 may beelectrically coupled to the first circuit patterns 1150 through firstconductive adhesion layers 1211 disposed on the first circuit patterns1150 that are exposed by the first openings 1142. A first dielectriclayer 1160 may be disposed on a bottom surface of the substrate bodylayer 1110 to cover the first circuit patterns 1150. At least one of thefirst circuit patterns 1150 may be exposed by a contact window 1161extending through the first dielectric layer 1160. Outer connectionterminals 1600 may be attached to the first circuit patterns 1150exposed by the contact windows 1161. The second bumps 1310 may beelectrically coupled to the second circuit patterns 1130 through secondconductive adhesion layers 1311 disposed on the second circuit patterns1130 that are exposed by the second openings 1143. A conductive via 1113may extend through the substrate body layer 1110 to electrically coupleat least one of the first circuit patterns 1150 to at least one of thesecond circuit patterns 1130. Accordingly, the second bump 1310 may beelectrically coupled to the outer connection member 1600 through theconductive via 1113. A protection layer 1500 may be disposed on thepackage substrate 1100 to cover the first and second semiconductor chips1200, 1300. The first semiconductor chip 1200 may be attached to thepackage substrate 1100 using an adhesive layer (not shown) disposedbetween the first semiconductor chip 1200 and the second dielectriclayer 1140. The second semiconductor chip 1300 may be attached to thefirst semiconductor chip 1200 using an adhesive layer 1430 disposedbetween the first and second semiconductor chips 1200, 1300.

Referring to FIG. 14, a stack package 19 may include a package substrate2100 and first and second semiconductor chips 2200, 2300 that arevertically stacked on the package substrate 2100 in a flip chip form. Aplurality of first bumps 2210 may be disposed on a bottom surface(corresponding to a front surface) of two opposing edges of the firstsemiconductor chip 2200 and may electrically couple the firstsemiconductor chip 2200 to the package substrate 2100. A plurality ofsecond bumps 2310 may be disposed on a bottom surface (corresponding toa front surface) of two opposing edges of the second semiconductor chip2300 and may electrically couple the second semiconductor chip 2300 tothe package substrate 2100.

The package substrate 2100 may include second openings 2143 that extendthrough a second dielectric layer 2140 to expose second circuit patterns2130 that are electrically coupled to the second bumps 2310. Each of thesecond openings 2143 may have a generally slit shape and may expose thesecond circuit patterns 2130 that are arranged on an edge of a substratebody layer 2110 and are spaced apart from each other. First openings2142 and third openings 2145 aligned with the first openings 2142 mayextend through the substrate body layer 2110 and the second dielectriclayer 2140 and may expose first circuit patterns 2150 disposed on abottom surface of the substrate body layer 2110. Each of the firstopenings 2142 and the corresponding second opening 2145 may have agenerally slit shape and may expose the first circuit patterns 2150 thatare arranged on the bottom surface of an edge of the substrate bodylayer 2110 and are spaced apart from each other. Because the first andthird openings 2142, 2145 have a generally slit shape, each firstopening 2142 and the corresponding third opening 2145 may expose atleast two or more first circuit patterns 2150 that are arranged on anedge of the substrate body layer 2110 to act as bonding pads. In such acase, there may be a relative increase in an alignment margin when thefirst bumps 2210 are inserted in the first and third openings 2142,2145.

The first bumps 2210 may be electrically coupled to the first circuitpatterns 2150 through first conductive adhesion layers 2211 disposed onthe first circuit patterns 2150 that are exposed by the first openings2142. A first dielectric layer 2160 may be disposed on a bottom surfaceof the substrate body layer 2110 to cover the first circuit patterns2150. At least one of the first circuit patterns 2150 may be exposed bya contact window 2161 extending through the first dielectric layer 2160.Outer connection terminals 2600 may be attached to the first circuitpatterns 2150 exposed by the contact windows 2161. The second bumps 2310may be electrically coupled to the second circuit patterns 2130 throughsecond conductive adhesion layers 2311 disposed on the second circuitpatterns 2130 exposed by the second openings 2143. A conductive via 2113may extend through the substrate body layer 2110 to electrically coupleat least one of the first circuit patterns 2150 to at least one of thesecond circuit patterns 2130. Accordingly, the second bump 2310 may beelectrically coupled to the outer connection member 2600 through theconductive via 2113.

A protection layer 2500 may be disposed on the package substrate 2100and may surround the first and second semiconductor chips 2200, 2300.The protection layer 2500 may be disposed on the package substrate 2100to expose a surface of the second semiconductor chip 2300 opposite thefirst semiconductor chip 2200. The protection layer 2500 may cover thesidewalls of the first and second semiconductor chips 2200, 2300. Theprotection layer 2500 may have a top surface that is substantiallycoplanar with a top surface of the second semiconductor chip 2300 or islocated at a relatively lower level than the top surface of the secondsemiconductor chip 2300.

The first semiconductor chip 2200 may be attached to the packagesubstrate 2100 using an adhesive layer (not shown) disposed between thefirst semiconductor chip 2200 and the second dielectric layer 2140. Thesecond semiconductor chip 2300 may be attached to the firstsemiconductor chip 2200 using an adhesive layer 2430 disposed betweenthe first and second semiconductor chips 2200 and 2300.

FIG. 15 is a block diagram representation of an electronic systemincluding a memory card 1800 employing an embodiment of at least onestack package.

Referring to FIG. 15, the memory card 1800 may include a memory 1810,such as for example a nonvolatile memory device, and a memory controller1820. The memory 1810 and the memory controller 1820 may store data orread stored data. At least one of the memory 1810 and the memorycontroller 1820 may include one or more embodiments of one or more stackpackages.

The memory 1810 may include a nonvolatile memory chip to which thetechnology of one or more of the embodiments is applied.

The memory controller 1820 may issue commands to the memory 1810 tomanage the reading of stored data or the storage of data in response toa read/write request from a host 1830.

FIG. 16 is a block diagram representation of an electronic system 2710including an embodiment of a stack package.

The electronic system 2710 may include a controller 2711, aninput/output unit 2712, and a memory 2713. The controller 2711, theinput/output unit 2712 and the memory 2713 may be electrically coupledwith one another through a bus 2715. The bus 2715 provides a pathway forthe movement of data.

In an embodiment, the controller 2711 may include one or more of atleast one microprocessor, at least one digital signal processor, atleast one microcontroller, and logic devices capable of performingsubstantially the same functions as these components. The controller2711 or the memory 2713 may include at least one embodiment of the stackpackages. The input/output unit 2712 may include one or more of akeypad, a keyboard, a display device, a touchscreen and so forth. Thememory 2713 is a device for storing data. The memory 2713 may store dataand/or commands to be executed by the controller 2711, and the like.

The memory 2713 may include a volatile memory device, such as forexample a DRAM, and/or a nonvolatile memory device, such as for examplea flash memory. For example, a flash memory may be mounted within aninformation processing system, such as for example a mobile terminal ora desk top computer. The flash memory may be a component of, for examplea solid state disk (SSD). The electronic system 2710 may store arelatively large amount of data in a flash memory system.

The electronic system 2710 may include an interface 2714 configured totransmit and receive data to and from a communication network. Theinterface 2714 may be a wired or wireless type of interface 2714. Forexample, the interface 2714 may include an antenna or a wired orwireless transceiver.

The electronic system 2710 may be realized, for example, as a mobilesystem, a personal computer, an industrial computer or a logic systemperforming various functions. For example, the mobile system may be oneof a personal digital assistant (PDA), a portable computer, a tabletcomputer, a mobile phone, a smart phone, a wireless phone, a laptopcomputer, a memory card, a digital music system and an informationtransmission/reception system.

If the electronic system 2710 is configured to perform wirelesscommunication, the electronic system 2710 may be used in a communicationsystem, such as for example a CDMA (code division multiple access)system, GSM (global system for mobile communications) system, NADC(north American digital cellular) system, E-TDMA (enhanced-time divisionmultiple access) system, WCDAM (wideband code division multiple access)system, CDMA2000, LTE (long term evolution) system and Wibro (wirelessbroadband Internet) system.

While certain embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare by way of example only. Accordingly, the thin stack packages, memorycards including the same and electronic systems including the samedescribed herein should not be limited based on the describedembodiments. Rather, the thin stack packages, memory cards including thesame and electronic systems including the same described herein shouldonly be limited in light of the claims that follow when taken inconjunction with the above description and accompanying drawings.

What is claimed is:
 1. A stack package comprising: a substrate includinga substrate body layer and first circuit patterns and second circuitpatterns, the substrate body layer has a first surface and a secondsurface opposite to the first surface, and the first circuit patternsare disposed on the second surface of the substrate body layer and thesecond circuit patterns are disposed on the first surface of thesubstrate body layer; a first semiconductor chip disposed over the firstsurface of the substrate body layer and including a first bump, thefirst bump penetrating the substrate body layer and a dielectric layerto be electrically coupled to the first circuit patterns; and a secondsemiconductor chip disposed over the first surface of the substrate bodylayer to be stacked on a surface of the first semiconductor chip andincluding a second bump, the second bump thoroughly bypasses the firstsemiconductor chip, penetrating the dielectric layer in such a way thatthe sides of the second bump are in contact with the dielectric layerand a protection layer, to be electrically coupled to the second circuitpatterns, wherein the first and second bumps have the same length. 2.The stack package of claim 1, further comprising at least one conductivevia extending through the substrate body layer to electrically coupleone of the first circuit patterns to one of the second circuit patterns.3. The stack package of claim 1, wherein at least of portion of thefirst circuit patterns are exposed by first openings extending throughthe substrate body layer; and wherein the first bumps extend into thefirst openings.
 4. The stack package of claim 3, wherein each of thefirst openings has a generally slit shape and at least two of the firstbumps extend into a respective one of the first openings.
 5. The stackpackage of claim 3, wherein each of the first openings has a throughhole shape and each of the first bumps extend into a respective one ofthe first openings.
 6. The stack package of claim 3, wherein thesubstrate further includes a first dielectric layer that is disposedadjacent the second surface of the substrate body layer and exposes atleast one of the first circuit patterns; and wherein an outer connectionterminal is electrically coupled to the exposed first circuit pattern.7. The stack package of claim 3, wherein the substrate further includesa second dielectric layer that is disposed adjacent the first surface ofthe substrate body layer and covers the second circuit patterns; andwherein at least a portion of the second circuit patterns are exposed bysecond openings that extend through the second dielectric layer.
 8. Thestack package of claim 7, wherein each of the first openings aresubstantially vertically aligned with a respective one of third openingsthat extend through the second dielectric layer.
 9. The stack package ofclaim 7, wherein each of the second openings has a generally slit shapeand at least two of the second bumps extend into a respective one of thesecond openings.
 10. The stack package of claim 1, further comprising afirst adhesive layer disposed between the substrate and the firstsemiconductor chip.
 11. The stack package of claim 1, further comprisinga second adhesive layer disposed between the first semiconductor chipand the second semiconductor chip.
 12. The stack package of claim 11,wherein the second bumps have a length that is relatively greater than atotal combined thickness of the first semiconductor chip and the secondadhesive layer.
 13. The stack package of claim 1, wherein the secondbumps are disposed along one of an edge of the second semiconductor chipand two opposing edges of the second semiconductor chip.
 14. The stackpackage of claim 1, further comprising a protection layer disposed onthe substrate surrounding sidewalls of the first and secondsemiconductor chips, wherein the protection layer covers a surface ofthe second semiconductor chip opposite the first semiconductor chip. 15.The stack package of claim 1, wherein a length of the secondsemiconductor chip is stacked in a generally perpendicular configurationwith respect to a length of the first semiconductor chip to cross thefirst semiconductor chip or to provide a step structure.
 16. A stackpackage comprising: a substrate body layer having a first surface and asecond surface; first circuit patterns disposed on the second surface ofthe substrate body layer; second circuit patterns disposed on the firstsurface of the substrate body layer; a first semiconductor chip disposedover the first surface of the substrate body layer and including a firstbump, the first bump penetrating the substrate body layer and adielectric layer to be electrically coupled to the first circuitpatterns; and a second semiconductor chip disposed over the firstsurface of the substrate body layer to be stacked on a surface of thefirst semiconductor chip and including a second bump, the second bumpthoroughly bypasses of the first semiconductor chip, penetrating thedielectric layer in such a way that the sides of the second bump are incontact with the dielectric layer and a protection layer, to beelectrically coupled to the second circuit patterns, wherein acenterline along a length of the second semiconductor chip is generallyperpendicular to a centerline along a length of the first semiconductorchip, wherein the first and second bumps have substantially the samelength.
 17. A stack package comprising: a substrate including asubstrate body layer having a first surface and a second surface, andfirst circuit patterns and second circuit patterns, the first circuitpatterns are disposed on the second surface of the substrate body layerand the second circuit patterns are disposed on the first surface of thesubstrate body layer; a first semiconductor chip disposed over the firstsurface of the substrate body layer and including a first bump, thefirst bump penetrating the substrate body layer and a dielectric layerto be electrically coupled to the first circuit patterns; a secondsemiconductor chip disposed over the first surface of the substrate bodylayer to be stacked on a surface of the first semiconductor chip andincluding a second bump, the second bump thoroughly bypasses the firstsemiconductor chip, penetrating the dielectric layer in such a way thatthe sides of the second bump are in contact with the dielectric layerand a protection layer, to be electrically coupled to the second circuitpatterns; a first dielectric layer covering the first circuit patterns;a second dielectric layer covering the second circuit patterns; and aprotection layer covering the first and second semiconductor chips,wherein the first and second bumps have substantially the same length.